TK9A90E mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V.
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakag.
Image gallery
Download